Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity

Journal of Crystal Growth

Volumn 191, Issue 3, 1998, Pages 586-588

  Lin, Lanying ^a   Zhong, Xingru ^a   Chen, NuoFu ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Microgravity; SI GaAs; Stoichiometry

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; MICROGRAVITY PROCESSING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS;

ETCH PIT DENSITY (EPD);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032117420     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00372-8     Document Type: Article

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