Investigation of fabrication uniformity and emission reliability of silicon field emitters for use in space

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 1072-1075

  Wang, L ^a   Aplin, K L ^a   Huq, S E ^a   Kent, B J ^a   Stevens, R ^a   Malik, A ^a   Blom, H O ^b   Loader, I M ^a   Thomas, G R ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRODES; GATES (TRANSISTOR); NANOTECHNOLOGY; PROJECT MANAGEMENT; SILICON WAFERS; THERMOOXIDATION;

FABRICATION UNIFORMITY; RUTHERFORD APPLETON LABORATORY; SILICON FIELD EMITTERS;

ELECTRONIC EQUIPMENT;

EID: 33645508087     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2165668     Document Type: Article

References (5)

1. L. Wang, R. Stevens, E. Huq, I. Loader, B. Kent, and K. Aplin, J. Vac. Sci. Technol. B 22, 1407 (2004).
2. K. L. Aplin, B. Kent, C. M. Collingwood, L. Wang, R. Stevens, E. Huq, and A. Malik, Adv. Space Res. (to be published).
3. B. J. Kent, K. L. Aplin, L. Wang, S. E. Huq, R. Stevens, A. Malik, and D. Nicolini, Class. Quantum Grav. 22, S483 (2005).
4. K. L. Aplin, C. M. Collingwood, and B. Kent, J. Phys. D 37, 2009 (2004).
5. F. Charbonnier, J. Vac. Sci. Technol. B 16, 880 (1998).