Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 99, Issue 3, 2006, Pages

  Zhao, H ^a   Xu, Y Q ^a   Ni, H Q ^a   Zhang, S Y ^a   Wu, D H ^a   Han, Q ^a   Wu, R H ^a   Niu, Z C ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ANNEALING TEMPERATURE; GAIN(N)(SB)AS/GAAS QUANTUM WELL; INTERDIFFUSION;

RAPID THERMAL ANNEALING;

EID: 33645505738     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2164539     Document Type: Article

References (16)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
2. T. Miyamoto, T. Takada, K. Takeuchi, F. Koyama, and K. Iga, Quantum Semiclassic. Opt. 9, 126 (1997).
3. S. G. Spruytte, C. W. Coldren, J. S. Harris, W. Wampler, P. Krispin, K. Ploog, and M. C. Larson, J. Appl. Phys. 89, 4401 (2001).
4. W. Li, M. Pessa, T. Ahlgren, and J. Dekker, Appl. Phys. Lett. 79, 1094 (2001).
5. N. Q. Thinh, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 79, 3089 (2001).
6. Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, R. H. Wu, and W. Ge, Appl. Phys. Lett. 77, 1280 (2000).
7. X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, Appl. Phys. Lett. 75, 178 (1999).
8. H. Shimizu, K. Kumada, S. Uchiyama, and A. Kasukawa, Electron. Lett. 36, 1379 (2000).
9. V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, IEEE J. Sel. Top. Quantum Electron. 8, 795 (2002).
10. X. Yang, J. B. Heroux, L. F. Mei, and W. I. Wang, Appl. Phys. Lett. 78, 4068 (2001).
11. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, NAMBE 2004, 22nd North American MBE Conference, Banff, Alberta, Canada (unpublished).
12. H. Shimizu, K. Kumada, S. Uchiyama, and A. Kasukawa, Furukawa Electric, Furukawa Review No. 21, 2002 (unpublished).
13. C. Hilsum and A. C. Rose-Innes, Semiconductor III-V Compound (Pergamon, New York, 1961).
14. L. H. Li, Z. Pan, W. Zhang, Y. W. Lin, Z. Q. Zhou, and R. H. Wu, J. Appl. Phys. 87, 245 (2000).
15. E.-M. Pavelescu, A. Gheorghiu, M. Dumitrescu, A. Tukiainen, and T. Jouhti, Appl. Phys. Lett. 85, 6158 (2004).
16. L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Ballet, P. Duvaut, G. Rolland, and A. Million, J. Appl. Phys. 91, 5902 (2002).