High temperature annealed Ge/Ag/Ni ohmic contact for InAlAs/InGaAs HEMTs

Electronics Letters

Volumn 41, Issue 11, 2005, Pages 664-665

  Zhao, W ^a   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE; ELECTRON MOBILITY; GERMANIUM; HIGH TEMPERATURE EFFECTS; INDIUM COMPOUNDS; METALLIZING; MOLECULAR BEAM EPITAXY; NICKEL; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SILVER; TRANSMISSION LINE THEORY;

ANNEALING TEMPERATURES; CONTACT RESISTANCE; HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); SHEET RESISTANCE;

TRANSISTORS;

EID: 20344362709     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051106     Document Type: Article

References (8)

1. Endoh, A., Yamashita, Y., Shinohara, K., Hikosaka, K., Matsui, T., Hiyamizu, S., and Mimura, T.: 'InP-based high electron mobility transistors with very short gate-channel distance', Jpn. J. Appl. Phys., 2003, 42, (4B), pp. 2214-2218
2. 0.47As HEMTs on GaAs substrate', Electron. Lett., 2002, 38, (8), pp. 389-391
3. Mammann, M., Leuther, A., Benkhelifa, F., Feltgen, T., and Jantz, W.: 'Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs', Phys. Status Solidi A, 2003, 195, (1), pp. 81-86
4. Alamo, J.A. del, and Villanueva, A.A.: 'Thermal, electrical and environmental reliability of InP HEMTs and GaAs PHEMTs', IEDM, 2004, pp. 41.1.1-41.1.4
5. Chen, K.J., Enoki, T., Maezawa, K., Arai, K., and Yamamoto, M.: 'High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried-gate technologies', IEEE Trans. Electron Devices, 1996, 43, (2), pp. 252-257
6. Mahajan, A., Arafa, M., Fay, P., Caneau, C., and Adesida, I.: 'Enhancement-mode high electron mobility transistors (E-HEMT's) lattice-matched to InP', IEEE Trans. Electron Devices, 1998, 45, (12), pp. 2422-2429
7. Yoshida, N., Yamamoto, Y., Takano, H., Sonoda, T., Takamiya, S., and Mitsui, S.: 'Alloyed and non-alloyed ohmic contacts for AlInAs/InGaAs high electron mobility transistors', Jpn. J. Appl. Phys. 1, 1994, 33, (6A), pp. 3373-3376
8. Onda, K., Fujihara, A., Mizuki, E., Hori, Y., Miyamoto, H., Samoto, N., and Kuzuhara, M.: 'Highly reliable InAlAs/InGaAs heterojunction FETs fabricated using completely molybdenum-based electrode technology (COMET)', IEEE MTT-S Int. Microw. Symp. Dig., 1994, pp. 261-264