Growth and characterization of La2/3Ca1/3MnO 3 thin films on 'silicon on insulator' substrates

Applied Physics A: Materials Science and Processing

Volumn 83, Issue 2, 2006, Pages 313-319

  Li, J ^a   Wang, P ^a,b   Peng, W ^a   Xiang, J Y ^a   Zhu, X H ^a   Chen, Y F ^a   Wang, F B ^a   Zheng, D N ^a  

^a INSTITUTE OF PHYSICS   (China)

^b Yanbei Normal Institute   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; EPITAXIAL GROWTH; GROWTH (MATERIALS); MAGNETIZATION; PULSED LASER DEPOSITION; SILICON; THIN FILMS; ZIRCONIUM;

CUBE-ON-DIAGONAL EPITAXY; LARGE LOW-FIELD MAGNETORESISTANCE (LFMR); MAGNETOCRYSTALLINE ANISOTROPY; SILICON-ON-INSULATOR (SOI);

LANTHANUM COMPOUNDS;

EID: 33645277147     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-006-3491-6     Document Type: Article

References (25)

1. A. Gupta, G.Q. Gong, G. Xiao, P.R. Duncombe, P. Lecoeur, P. Trouilloud, Y.Y. Wang, V.P. Dravid, J.Z. Sun, Phys. Rev. B 54, 15 629 (1996)
2. H.Y. Hwang, S.-W. Cheong, N.P. Ong, B. Batlogg, Phys. Rev. Lett. 77, 2041 (1996)
3. J. Li, Q. Huang, Z.W. Li, L.P. You, S.Y. Xu, C.K. Ong, J. Phys. Condens. Matter 13, 3419 (2001)
4. J.J. Versluijs, M.A. Bari, J.M.D. Coey, Phys. Rev. Lett. 87, 026601 (2001)
5. A. Andrés, M. García-Hernández, J.L. Martínez, C. Prieto, Appl. Phys. Lett. 74, 3884 (1999)
6. N. García, M. Muñoz, Y.W. Zhao, Phys. Rev. Lett. 82, 2923 (1999)
7. J. Li, D.N. Zheng, X.S. Rao, C.H. Sow, L. Chen, C.K. Ong, Europhys. Lett. 82, 823 (2004)
8. E.S. Vlakhov, R.A. Chakalov, R.I. Chakalova, K.A. Nenkov, K. Do̊rr, A. Hanstein, K.H. Müller, J. Appl. Phys. 83, 2152 (1998)
9. C.J. Lu, Z.L. Wang, C. Kwon, Q.X. Jia, J. Appl. Phys. 88, 4032 (2004)
10. G.G. Shahidi, IBM J. Res. Dev. 46, 121 (2002)
11. L. Kang, Z.F. Di, S.Z. Yang, Y.J. Feng, P.H. Wu, Supercond. Sci. Technol. 15, 320 (2002)
12. P. Wang. J. Li, W. Peng, K. Chen, P.L. Lang, J.Y. Xiang, Y.F. Chen, X.P. Xu, H.Y. Tian, D.N. Zheng, Supercond. Sci. Technol. 17, 804 (2004)
13. D.B. Fenner, D.K. Biegelsen, R.D. Bringans, J. Appl. Phys. 66, 419 (1989)
14. T. Matthée, J. Wecker, H. Behner, G. Friedl, O. Eibl, K. Samwer, Appl. Phys. Lett. 61, 1240 (1992)
15. C.A. Copetti, H. Seltner, J. Schubert, W. Zander. O. Hollricher, C. Buchal, H. Schulz, N. Tellmann, N. Klein, Appl. Phys. Lett. 63, 1429 (1993)
16. D.K. Fork, D.B. Fenner, G.A.N. Conneil, J.M. Philips, T.H. Geballe, Appl. Phys. Lett. 57, 1137 (1990)
17. Q. Huang, A. Santoro, J.W. Lynn, R.W. Erwin, J.A. Borchers, J.L. Peng, K. Ghosh, R.L. Greene, Phys. Rev. B 58, 2684 (1998)
18. R.A. Rao, D. Lavric, T.K. Nath, C.B. Eom, L. Wu, F. Tsui, Appl. Phys. Lett. 73, 3294 (1998)
19. R. Hull, Properties of Crystalline Silicon (INSPEC, London 1999)
20. D.K. Fork, D.B. Fenner, A. Barrera, J.M. Philips, T.H. Geballe, G.A.N. Connell, J.B. Boyce, IEEE T Appl. Supercon. 1, 67 (1991)
21. S.M. Garrison, N. Newman, B.F. Cole, K. Char, R.W. Barton, Appl. Phys. Lett. 58, 2168 (1991)
22. J. O'Donnell, M.S. Rzchowski, J.N. Eckstein, I. Bozovic, Appl. Phys. Lett. 72, 1775 (1998)
23. H.S. Wang, Q. Li, K. Liu, C.L. Chien, Appl. Phys. Lett. 74, 2212 (1999)
24. H.S. Wang, Q. Li, Appl. Phys. Lett. 73, 2360 (1998)
25. N.D. Mathur, G. Burnell, S.P. Issac, T.J. Jackson, B.S. Teo, J.L. Mc-Manus Driscoll, L.F. Cohen, J.E. Evetts, M.G. Blamire, Nature 387, 266 (1997)