Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 403-406

  Takakura, K ^a   Hayama, K ^a   Watanabe, D ^a   Ohyama, H ^a   Kudou, T ^a   Shigaki, K ^a   Matsuda, S ^b   Kuboyama, S ^b   Kishikawa, T ^c   Uemura, J ^c   Simoen, E ^d   Claeys, C ^d,e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c KUMAMOTO UNIVERSITY   (Japan)

^d IMEC   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Induced defect levels; Neutron irradiation; Radiation damage; Si photodiode

Indexed keywords

ELECTRONS; NEUTRON IRRADIATION; SILICON; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

INDUCED DEFECT LEVELS; RADIATION-INDUCED LATTICE DEFECTS; SI PHOTODIODE;

PHOTODIODES;

EID: 33645228790     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.104     Document Type: Conference Paper

References (6)

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