First-principles study of strain effects on Mn in Si

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 672-676

  Yabuuchi, S ^a   Ohta, E ^a   Kageshima, H ^b   Taguchi, A ^b  

^a KEIO UNIVERSITY   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

First principles calculation; Magnetic semiconductor; Si; Strain

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; IMPURITIES; MANGANESE; STRAIN; THIN FILMS;

EPITAXIAL FILMS; FIRST-PRINCIPLES CALCULATION; MAGNETIC SEMICONDUCTOR;

SILICON;

EID: 33645225165     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.169     Document Type: Conference Paper

References (20)

1. H. Ohno Science 281 1998 951
2. H. Ohno Nature 408 2000 944
3. A. Oiwa Appl. Phys. Lett. 78 2001 518
4. A. Oiwa Appl. Phys. Lett. 88 2002 137202
5. A.M. Nazmul Jpn. J. Appl. Phys. 43 2004 L233
6. Y.D. Park Science 295 2002 651
7. M. Bolduc Phys. Rev. B 71 2005 033302
8. G.M. Dalpian Phys. Rev. B 68 2003 113310
9. Y. Miura J. Phys.: Condens. Matter 16 2004 S5735
10. H.H. Woodbury, and G.W. Ludwing Phys. Rev. 117 1960 102
11. Y. Kamon Physica B 308-310 2001 391
12. Q. Zhang Surf. Sci. 507-510 2002 453
13. D. Vanderbilt Phys. Rev. B 41 1990 892
14. K. Laasonen Phys. Rev. B 47 1993 10142
15. N. Troullier, and J.L. Martins Phys. Rev. Lett. 43 1991 1993
16. J. Yamauchi Phys. Rev. B 54 1996 5586
17. M. Tsukada, et al., Computer program package TAPP, University of Tokyo, Tokyo, Japan, 1983-2005.
18. O. Nakanishi J. Magn. Magn. Mater. 15-18 1980 879
19. Landolt-Bornstein: in: O. Madelung (Ed.), Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, vol. 17A, Springer, Berlin, 1982.
20. B.