Growth and characterization of Mn-doped cubic-GaN

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 658-662

  Takano, Fumiyoshi ^a   Ofuchi, Hironori ^b   Lee, Jeungwoo ^c   Takita, Kôki ^c   Akinaga, Hiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Cubic GaN:Mn; Magnetism; RF plasma assisted MBE

Indexed keywords

CARRIER CONCENTRATION; NITROGEN; PARAMAGNETISM; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THIN FILMS;

CUBIC GAN:MN; NITROGEN VACANCIES; RF-PLASMA-ASSISTED MBE;

GALLIUM NITRIDE;

EID: 33645211752     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.166     Document Type: Conference Paper

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