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The process followed the description given in J. K. W. Yang, E. Dauler, A. Ferri, A. Pearlman, A. Verevkin, G. Gol'tsman, B. Voronov, R. Sobolewski, W. E. Keicher, and K. K. Berggren, IEEE Trans. Appl. Supercond. 15, 626 (2005), with the following notable modifications: only the hydrogen silsesquioxane process with a resist thickness of 100 nm was used; the resist was developed for 8 min; and reactive-ion etching was uninterrupted (2 min at 20 mTorr and 116 V dc self-bias).
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33645143414
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note
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n (i.e., the normal domain covered only a small fraction of the wire).
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20
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33645145171
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note
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ret.
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21
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33645144969
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note
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The 4 GHz bandwidth of our amplifiers obscured the asymmetry of the pulses from very short wires.
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22
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33645150940
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note
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k〉 = 360 pH nm and 〈λ〉 = 535 nm (brackets indicate an average over devices).
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23
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31344463940
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K. M. Rosfjord, J. K. W. Yang, E. A. Dauler, A. J. Kerman, V. Anant, B. M. Voronov, G. N. Gol'tsman, and K. K. Berggren, Opt. Express 14, 527 (2006).
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Gol'tsman, G.N.7
Berggren, K.K.8
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24
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33645153791
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note
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1γ).
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25
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33645135908
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note
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C. This was included numerically in our model.
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26
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33645153995
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note
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A small time offset was added to each prediction, to account for the time it took the current to decay to zero and the device to return to the superconducting state. These offsets were fixed at the observed fall times of the electrical pulses for each device, 330 and 160 ps for the 50% and 25% fill devices, respectively.
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27
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27744560925
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R. H. Hadfield, A. J. Miller, S. W. Nam, R. L. Kautz, and R. E. Schwall, Appl. Phys. Lett. 87, 203505 (2005).
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