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Volumn 243, Issue 4, 2006, Pages 787-793

High-temperature defect study of tellurium-enriched CdTe:In

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EID: 33645154133     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200564762     Document Type: Article
Times cited : (19)

References (22)
  • 1
    • 0005368191 scopus 로고
    • Properties of narrow gap cadmium-based compounds
    • P. Capper (ed.), INSPEC, London
    • P. Capper (ed.), Properties of Narrow Gap Cadmium-based Compounds, EMIS Datareviews Series No. 10 (INSPEC, London, 1994).
    • (1994) EMIS Datareviews Series No. 10 , vol.10
  • 21
    • 0004837159 scopus 로고
    • edited by G. Bertolini and A. Coche (North Holland, Amsterdam)
    • J. W. Mayer, in: Semiconductor detectors, edited by G. Bertolini and A. Coche (North Holland, Amsterdam, 1968), p. 445.
    • (1968) Semiconductor Detectors , pp. 445
    • Mayer, J.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.