Bonded thick film SOI with pre-etched cavities

Microsystem Technologies

Volumn 12, Issue 5, 2006, Pages 406-412

  Suni, Tommi ^a   Henttinen, Kimmo ^a   Dekker, James ^a   Luoto, Hannu ^a   Kulawski, Martin ^a   Mäkinen, Jari ^b   Mutikainen, Risto ^c  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b Okmetic Oyj   (Finland)

^c VTI Technologies Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ETCHING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

HF-ETCHING TEST; SILICON DIAPHRAGMS; VACUUM BONDING;

THICK FILMS;

EID: 33645134337     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-005-0039-1     Document Type: Conference Paper

References (3)

1. Prochaska A, Baine PT, Mitchell SJN, Gamble HS (2000) Production of silicon diaphragms by precision grinding, In: Karam J-M, Yasaitis J (Eds) Micromachining and microfabrication process technology VI, Proceedings of SPIE Vol. 4174, pp 244-255
2. Suni T, Kiihamäki J, Henttinen K, Suni I, Mäkinen J (2003) Characterization of bonded interface by HF etching method. In: Bengtsson S, Baumgart H, Hunt CE, Suga T (Eds) Semiconductor wafer bonding VII: science, technology, and applications, Electrochemical Society, pp 70-75
3. Tong Q-Y, Gösele U (1995) Semiconductor wafer bonding. Electrochemical Society series, John Wiley & Sons, New York, p 45