Characterization of bonded interface by hf etching method

Proceedings - Electrochemical Society

Volumn 19, Issue , 2003, Pages 70-75

  Suni, T ^a   Kiihamaki J ^a   Henttinen, K ^a   Suni, I ^a   Makinen J ^b  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b Okmetic Oyj   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ETCHING; HYDROFLUORIC ACID; INTERFACIAL ENERGY; QUARTZ; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THERMAL EXPANSION;

BLADE INSERTION; BONDED INTERFACE; BURIED OXIDE (BOX); ETCHING METHOD;

SILICON ON INSULATOR TECHNOLOGY;

EID: 3042697903     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. T. Martini, J. Steinkirchner, and U, Gösele, J. Electrochem. Soc. 144 (1), 354-357 (1997).
3. T. Suni, K. Henttinen, I. Suni, and J. Mäkinen, J. Electrochem. Soc. 149 (6) G348-G351 (2002)
4. Q.-Y. Tong, U. Gösele, Semiconductor Wafer Bonding: Science and Technology, Electrochemical Society Series, Wiley, (1999)