Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits

Semiconductor Science and Technology

Volumn 21, Issue 4, 2006, Pages 550-557

  Shiktorov, P ^a   Starikov, E ^a   Gruzinskis V ^a   Perez S ^b   Gonzalez T ^b   Reggiani, L ^c   Varani, L ^d   Vaissiere J C ^d  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b UNIVERSITY OF SALAMANCA   (Spain)

^c NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^d UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; RESONANT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

ELECTRONIC NOISE; LARGE SIGNAL VOLTAGE; PARALLEL OUTPUT RESONANT CIRCUIT;

SCHOTTKY BARRIER DIODES;

EID: 33644981192     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/4/023     Document Type: Article

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