Monte Carlo Simulation of Schottky Diodes Operating under Terahertz Cyclostationary Conditions

IEEE Electron Device Letters

Volumn 25, Issue 1, 2004, Pages 1-3

  Shiktorov, P ^a   Starikov, E ^a   Gruzinskis V ^a   Perez S ^b   Gonzalez T ^b   Reggiani, L ^c   Varani, L ^d   Vaissiere J C ^d  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b UNIVERSITY OF SALAMANCA   (Spain)

^c NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^d UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Cyclostationary operation; Frequency multiplication; Monte Carlo (MC) simulation; Schottky barrier diodes; Signal to noise ratio; Terahertz generation

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC FIELDS; FOURIER TRANSFORMS; FREQUENCY MULTIPLYING CIRCUITS; HARMONIC ANALYSIS; MONTE CARLO METHODS; PLASMAS; POISSON EQUATION; SHOT NOISE; SIGNAL TO NOISE RATIO; SOLID STATE DEVICES;

CYCLOSTATIONARY CONDITIONS; PERIODIC LARGE-SIGNAL CONDITIONS; TERAHERTZ GENERATION;

SCHOTTKY BARRIER DIODES;

EID: 0346076631     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.821635     Document Type: Article

References (12)

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