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Volumn 45, Issue 3 A, 2006, Pages 1668-1674

Photoinduced anisotropic deformation in As2S3 glass

Author keywords

Amorphous semiconductor; As2S3; Chalcogenide glass; Photoinduced phenomenon

Indexed keywords

BIREFRINGENCE; ELECTRIC FIELD EFFECTS; LIGHT POLARIZATION; MAGNETIC ANISOTROPY;

EID: 33644978874     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.1668     Document Type: Article
Times cited : (25)

References (55)
  • 24
    • 33644978923 scopus 로고    scopus 로고
    • note
    • The absorbed photon number is calculated from the incident light intensity and the absorption coefficient, neglecting light reflections and photodarkenig effects. Accordingly, the accuracy is estimated to be better than one order.
  • 27
    • 33644990306 scopus 로고    scopus 로고
    • note
    • To examine the high-energy behavior, we have performed several experiments. Needlessly, thinner films (for instance 0.3 μm) gave smaller deformations with lower accuracy. It should also be mentioned that 2.5 eV light, which has a penetration depth of 1.4 μm, has not provided an appreciable efficiency difference in films with thicknesses of 2.3 and 0.3 μm. It seems that, in addition to the penetration depth, other effects such as light intensity give some additional effects on the efficiency.
  • 50
    • 33644970324 scopus 로고    scopus 로고
    • note
    • A quantitative analysis may be valuable here. Figure 7(b) shows that the Boson-peak intensity in the hillock is 70-80% of that in the unilluminated case. Provided that the intensity reduction corresponds to pure hydrostatic compression, taking the pressure result into account, we can envisage a generated pressure of ∼5 kbar. The bulk modulus of 125 kbar [K. Tanaka: Solid State Commun. 60 (1986) 295] implies that such a pressure can produce a densification of ∼4%, which is seemingly opposite to the result in Fig. 4(a). The difference may be due to a structural disordering effect.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.