Contact Area Lithography (CAL): A new approach to direct formation of nanometric chemical patterns

Chemistry of Materials

Volumn 18, Issue 5, 2006, Pages 1085-1088

  Bae, Changdeuck ^a   Shin, Hyunjung ^a   Moon, Jooho ^b   Sung, Myung M ^a  

^a Kookmin University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLAYERS; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SILANES; SURFACE STRUCTURE;

CONTACT AREA LITHOGRAPHY (CAL); NANOMETRIC CHEMICAL PATTERNS; PERIODIC SURFACE CHEMICAL PATTERNS (PSCP);

LITHOGRAPHY;

EID: 33644959310     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm052084m     Document Type: Article

References (29)

1. Brower, V. EMBO Rep. 2001, 2, 558.
2. MacBeath, G. Nat. Genet. 2002, 32 (Suppl.), 526.
3. Lee, K.-B.; Kim, E.-Y.; Mirkin, C. A.; Wolinsky, S. M. Nano Lett. 2004, 4, 1869.
4. Vörös, J.; Blatter, T.; Textor, M. MRS Bull. 2005, 30, 202.
5. Lee, K.-B.; Park, S.-J.; Mirkin, C. A.; Smith, J. C.; Mrksich, M. Science 2002, 295, 1702.
6. Michel, R.; Reviakine, I.; Sutherland, D.; Fokas, C.; Csucs, G.; Danuser, G.; Spencer, N. D.; Textor, M. Langmuir 2002, 18, 8580.
7. Gu, J.; Yam, C. M.; Li, S.; Cai, C. J. Am. Chem. Soc. 2004, 126, 8098.
8. Valsesia, A.; Colpo, P.; Silvan, M. M.; Meziani, T.; Ceccone, G.; Rossi, F. Nano Lett. 2004, 4, 1047.
9. (a) Deckman, H. W.; Dunsmuir, J. H. Appl. Phys. Lett. 1982, 41, 377.
10. (h) Deckman. H. W.; Dunsmuir, J. H. J. Vac. Sci. Technol. 1983, B1, 1109.
11. (a) Hulteen, J. C.; Van Duyne, R. P. J. Vac. Sci. Technol. 1995, A13, 1553.
12. (b) Haynes, C. L.; Van Duyne, R. P. J. Phys. Chem. B 2001, 105, 5599.
13. Whitney, A. V.; Myers, B. D.; Van Duyne, R. P. Nano Lett. 2004, 4, 1507.
14. Cai, Y.; Ocko, B. M. Langmuir 2005, 21, 9274.
15. McLellan, J. M.; Geissler, M.; Xia, Y. Chem. Phys. Lett. 2005, 408, 80.
16. Stöber, W.; Berner, A.; Blaschke, R. J. Colloid Interface Sci. 1969, 29, 710.
17. Denkov, N.; Velev, O.; Kralchevsky, P.; Ivanov, I.; Yoshimura, H.; Nagayama, K. Langmuir 1992, 8, 3183.
18. (a) Dimitrov, A.; Nagayama, K. Langmuir 1996, 12, 1303.
19. (b) Kralchevsky, P.; Nagayama, K. Langmuir 1994, 10, 23.
20. (c) Tessier, P.; Velev, O.; Kalambur, A.; Lenhoff, A.; Rabolt, J.; Kaerl, E. Adv. Mater. 2001, 13, 396.
21. We estimated the attractive capillary force to be ∼210 MPa per a colloid in the case of a 350 nm particle, where one particle has seven interconnections (one particle-substrate and six particle-particle ones), using equations from Kralchevsky, P.; Nagayama, K. Particles at Fluid Interfaces and Membranes; Elsevier: Amsterdam, 2001; pp 469-502.
22. Laarz, E.; Zhmud, B. V.; Bergström, L. J. Am. Ceram. Soc. 2000, 83, 2394.
23. Wang, Y.; Lieberman, M. Langmuir 2003, 19, 1159.
24. Michel, R.; Lussi, J. W.; Csucs, G.; Reviakine, I.; Danuser, G.; Ketterer, B.; Hubbell, J. A.; Textor, M.; Spencer, N. D. Langmuir 2002, 18, 3281.
25. 4F and also suite organic resist because commercial hydrofluidic acid solution can penetrate the organic resist materials.
26. 2 film and a fully grown OTS-SAM layer independently.
27. 3 (25.2).
28. Schreiber, F. Prog. Surf. Sci. 2000, 65, 151.
29. Haynes, C. L.; McFarland, A. D.; Smith, M. T.; Hulteen, J. C.; Van Duyne, R. P. J. Phys. Chem. B 2002, 106, 1898.