Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure calculations: Surface reconstruction, steps, and bending

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 7, 2005, Pages

  Hoshi, Takeo ^a,b   Iguchi, Yusuke ^a   Fujiwara, Takeo ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644949425     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.075323     Document Type: Article

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