Self-organizing modification of Si(111)-√3 × √3 R30°-Ga surfaces on the nanometer scale

Surface Science

Volumn 357-358, Issue , 1996, Pages 490-494

  Fujita, Ken ^a   Kusumi, Yukihiro ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

Gallium; Scanning tunneling microscopy; Silicon; Thermal desorption; Vicinal single crystal surfaces

Indexed keywords

ANNEALING; DESORPTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE TREATMENT; SURFACES;

MISCUT ANGLE; SELF ORGANIZATION MECHANISM; SURFACE TILTING; THERMAL DESORPTION;

SURFACE STRUCTURE;

EID: 3643103445     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00208-7     Document Type: Article

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