Cross-sectional scanning tunneling microscopy on cleaved Si(111): Observation of novel reconstruction and structural and electrical properties of MOS interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. B, 1996, Pages 3724-3729

  Komeda, Tadahiro ^a   Gwo, Shangjr ^a   Tokumoto, Hiroshi ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

Band bending; Cross sectional STM; Metal oxide semiconductor (MOS) interface; Scanning tunneling microscopy (STM); Si cleaving; Si(111) 2 1

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOS DEVICES; SILICON WAFERS; SURFACE STRUCTURE;

ATOMIC RESOLUTION; BAND BENDING; CROSS SECTIONAL SCANNING TUNNELING MICROSCOPY; METAL OXIDE SEMICONDUCTOR INTERFACE; MISSING ROW RECONSTRUCTION; SILICON CLEAVING; SURFACE RECONSTRUCTION;

SCANNING TUNNELING MICROSCOPY;

EID: 0030170070     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3724     Document Type: Article

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