Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 209-212

  Yeo, Yee Ngee ^a   Wang, Ying Qian ^a   Samanta, Santanu Kumar ^a   Yoo, Won Jong ^a   Samudra, Ganesh ^a   Gao, Dongyue ^a   Chong, Chee Ching ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

High ; Non volatile memory; SOHOS; Traps

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; FLASH MEMORY; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

HIGH Κ; NON-VOLATILE MEMORY; SOHOS;

ELECTRON TRAPS;

EID: 33644899916     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.126     Document Type: Conference Paper

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