Applications of functionally graded materials in optoelectronic devices

Optica Applicata

Volumn 35, Issue 4, 2005, Pages 663-667

  Wośko, Mateusz ^a   Paszkiewicz, Bogdan ^a   Piasecki, Tomasz ^a   Szyszka, Adam ^a   Paszkiewicz, Regina ^a   Tłaczała, Marek ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

A III BV; Functionally graded materials; Functionally graded materials (FGM); Optoelectronic

Indexed keywords

COMPUTER SIMULATION; DIODES; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; OPTICAL PROPERTIES; SEMICONDUCTOR DIODES; STRENGTH OF MATERIALS;

A III-BV; HETEROJUNCTION PHOTODETECTORS; THEORETICAL SIMULATION; P-I-N DIODES;

FUNCTIONALLY GRADED MATERIALS;

EID: 33644879734     PISSN: 00785466     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (4)

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2. BAUMEISTER H., VEUHOFF E., POPP M., HEINECKE H., GRINSCH GaInAsP MQW laser structures grown by MOMBE, Journal of Crystal Growth 188(1-4), 1998, pp. 266-74.
3. 1-xN ultraviolet p-n detector, Solid State Electronics 42(6), 1998, pp. 963-7.
4. YAMAGUCHI M., III-V compound multi-junction solar cells:present and future, Solar Energy Materials and Solar Cells 75(1-2), 2003, pp. 261-9.