Effect of polycrystalline interface on reliability of low temperature poly-Si TFTs

International Display Manufacturing Conference and Exhibition, IDMC'05

Volumn , Issue , 2005, Pages 510-512

  Liu, Yu Jung ^a   Wu, Yung Fu ^a   Yeh, Yung Hui ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Devices; TFT; Thin Film Materials

Indexed keywords

LEAKAGE CURRENTS; POLYSILICON; RELIABILITY; SURFACE ROUGHNESS;

GATE LEAKAGE CURRENT; POLYSILICON FILM; THIN-FILM MATERIALS;

THIN FILM TRANSISTORS;

EID: 33644645084     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Alain C. K. Chan et al., "Improved thin-film transistor characteristics on chemical-mechanically polished polycrystalline silicon film," Electron Devices Meeting Proceedings, pp.38 (1999).
2. Takashi Fujimura et al., "Reliability improvement of TFTs with thin gate insulator films by smoothing polycrystalline. silicon surface roughness,"AMLCD'01 Digest, pp.175-178 (2001).
3. C. Y. Chang et al.,"Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon film" IEEE Electron Device Letters, Vol.17 (3), pp.100-102, (1996)
4. Katsuyuli Suga et al.," The effect of a laser annealing ambient on the morphology and TFT performance of poly-Si films" SID'00, pp.534-537,(2000),
5. Mutsumi Kimnra et al.,"Dependence of poly-Si TFT characteristics on oxide interface traps and grain boundary traps" AMLCD'02 Digest, pp.255-258,(2002)