Improved thin-film transistor (TFT) characteristics on chemical-mechanically polished polycrystalline silicon film

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 1999, Pages 38-41

  Chan, Alain C K ^a   Chan, Mansun ^a   Ko, Ping K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CHEMICAL POLISHING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CHEMICAL MECHANICAL POLISHING; POLYSILICON THIN FILMS;

THIN FILM TRANSISTORS;

EID: 0033293346     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HKEDM.1999.836403     Document Type: Conference Paper

References (5)