Threshold voltage drift of amorphous silicon TFT in integrated drivers for active matrix LCDS

SID Conference Record of the International Display Research Conference

Volumn , Issue , 2002, Pages 83-85

  Lebrun, Hugues ^a   Szydlo, Nicolas ^a   Bidal, Eric ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC INSULATORS; INTERFACES (MATERIALS); THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

INTEGRATED DRIVERS; VOLTAGE DRIFT;

LIQUID CRYSTAL DISPLAYS;

EID: 0036455684     PISSN: 10831312     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. M.J. Powell, C. Van Berkel, and J.R. Hughes: Time and temperature dépendance of instability mechanisms in amorphous silicon thin film transistors. Appl. Phys. lett. 54 (14), 3 april pp 1323-1325.
3. Y. Kaneko, A. Sasano et T. Tsukada: Characterization of instability in amorphous silicon thin-film transistors. Jpn. Appl. phys. Vol 69 (1991) pp7301-7305.
4. Robertson, M.J. Powell: J. Appl. phys. Vol 44 (1984) pp 415.
5. F. Roy: Caractérisation des transistors couches minces à base de silicium hydrogéné. Thèse Université Paris XI (1986).
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7. H. Lebrun et al., SID 95, p403.
8. H. Lebrun et al., SID 96, p677.
9. T. Kretz et al., SID 97, p 301.