Fabrication of uniform Au silicide islands on the Si(1 1 1)-(7 × 7) substrate

Surface Science

Volumn 600, Issue 5, 2006, Pages 1125-1128

  Negishi, R ^a   Mochizuki, I ^a   Shigeta, Y ^a  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

Author keywords

Growth; Scanning tunneling microscopy; Silicide; Single crystal surface

Indexed keywords

DIMERS; GROWTH KINETICS; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; STACKING FAULTS;

AU SILICIDE ISLANDS; SINGLE CRYSTAL SURFACE;

GOLD;

EID: 33644606814     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.01.003     Document Type: Article

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