Through-process window resist modelling strategies for the 65 nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5992, Issue 1, 2005, Pages

  Borjon, Amandine ^a,e   Belledent, Jérôme ^a   Trouiller, Yorick ^c   Patterson, Kyle ^b   Lucas, Kevin ^b   Couderc, Christophe ^a   Sundermann, Frank ^d   Urbani, Jean Christophe ^d   Baron, Stanislas ^d   Rody, Yves ^a   Gardin, Christian ^b   Foussadier, Frank ^d   Schiavone, Patrick ^e  

^a NXP SEMICONDUCTORS   (Netherlands)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c CEA LETI   (France)

^d STMICROELECTRONICS   (France)

^e CEA GRENOBLE   (France)

Author keywords

Failure prediction; OPC; ORC; Process window; Resist modelling

Indexed keywords

COMPUTER SIMULATION; IMAGING SYSTEMS; MATHEMATICAL MODELS; PATTERN RECOGNITION; PHOTOLITHOGRAPHY; PROCESS CONTROL;

FAILURE PREDICTION; OPC; ORC; PROCESS WINDOW; RESIST MODELING;

MASKS;

EID: 33644590839     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.632096     Document Type: Conference Paper

References (3)

1. "Experimental results on Optical Proximity Correction with Variable Threshold Resist Model", N. Cobb et al. Proc. of SPIE, Vol 3051, p208, 1997.
2. "Application of a Simple Resist Model to Optical Proximity Correction", C. Dolainsky et al. Proc. of SPIE, Vol 3051, p774-780, 1997.
3. "Assessment of different simplified resist models", D. Fuard et al. Proc. of SPIE, Vol 4691, p 1266-1277, 2002.