Deposition of CeO2 films on Si(100) substrates by electron beam evaporation

Plasma Processes and Polymers

Volumn 3, Issue 2, 2006, Pages 197-200

  Djanovski, Georgi ^a   Beshkova, Milena ^a   Velinova, Sonia ^a   Mollov, Dimitar ^a   Vlaev, Petko ^a   Kovacheva, Daniela ^b   Vutova, Katia ^a   Mladenov, Georgi ^a  

^a INSTITUTE OF ELECTRONICS   (Bulgaria)

^b INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

Author keywords

CeO2; E beam evaporation (EBE); Epitaxy; Nanostructures; Scanning electron microscopy (SEM); XRD

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BEAM POWER; ELECTRON BEAM EVAPORATION; OXYGEN PRESSURE; SILICON SUBSTRATES; SUBSTRATE TEMPERATURE;

CERIUM COMPOUNDS;

EID: 33644557368     PISSN: 16128850     EISSN: None     Source Type: Journal    
DOI: 10.1002/ppap.200500095     Document Type: Article

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