Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 2, 2006, Pages 280-285

  Maiolo, L ^a   Pecora, A ^a   Fortunato, G ^a   Young, N D ^b  

^a CNR   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC FIELDS; ELECTRIC INSULATORS; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; MOS CAPACITORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; THIN FILM TRANSISTORS; THIN FILMS;

ANNEALING TEMPERATURES; INTERFACE STATE DENSITY; MICROWAVE POWERS;

SILICA;

EID: 33644542136     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2167971     Document Type: Article

References (20)

1. N. D. Young, D. J. McCulloch, and R. M. Bunn, Proceedings of the Fourth International Workshop on Active Matrix Liquid Crystal Display, Tokyo, 11 and 12 September 1997 (unpublished), p. 47.
2. N. D. Young, M. J. Trainor, S.-Y. Yoon, D. J. McCulloch, R. W. Wilks, A. Pearson, S. Godfrey, P. W. Green, S. Roosendaal, and E. Hallworth, in Flexible Electronics-Materials and Device Technology, MRS Symposia Proceedings No. 769, edited by, N. Fruehauf, B. R. Chalamala, B. E. Gnade, and, J. Jang, (Materials Research Society, Pittsburgh, 2003).
3. K.-H. Liu, Y.-C. Hung, C.-H. Chan, C.-C. Liao, and I.-J. Lin, Proceeding of the Society for Information Display Conference, Seattle, WA, 23-28 May 2004 (unpublished), pp. 610-613.
4. S. Utsunomiya, T. Saeki, S. Inoue, and T. Shimoda, Proceedings of the Ninth International Workshop on Active Matrix Liquid Crystal Display, Tokyo, 10-12 July 2002 (unpublished), p. 37.
5. A. Asano and T. Kinoshita, SID Int. Symp. Digest Tech. Papers 33, 1196 (2002).
6. D. Y. Kim, J. Y. Kwon, J. S. Yung, K. B. Park, H. S. Cho, H. Lim, J. M. Kim, H. Yin, X. Zhang, and T. Noguchi, Proceedings of the ITC 2005, Seoul, 14 and 15 March 2005 (unpublished), p. 242.
7. D.-G. Moon, Y.-H. Kim, W.-K. Kim, and J.-I. Han, Proceedings of the ITC 2005, Seoul, 14 and 15 March 2005 (unpublished), p. 238.
8. S. M. Han, M. C. Lee, S. H. Khang, M. Y. Shin, and M. K. Han, in Flexible Electronics-Materials and Device Technology, MRS Symposia Proceedings No. 769, edited by, N. Fruehauf, B. R. Chalamala, B. E. Gnade, J. Jang, (Materials Research Society, Pittsburgh, 2003).
9. J. Batey and E. Tierney, J. Appl. Phys. 60, 3136 (1986).
10. J. S. Jung, J. Y. Kwon, Y. S. Park, D. Y. Kim, H. S. Cho, K. B. Park, X. Wenxu, H. Lim, H. Yin, and T. Noguchi, Proceedings of the Tenth International Workshop on Active Matrix Liquid Crystal Display, Tokyo, 25-27 August 2004 (unpublished), p. 255.
11. M. Meitine and A. Sazonov, in Flexible Electronics-Materials and Device Technology, MRS Symposia Proceedings No. 769, edited by, N. Fruehauf, B. R. Chalamala, B. E. Gnade, J. Jang, (Materials Research Society, Pittsburgh, 2003).
12. D. Della Sala and G. Fortunato, J. Electrochem. Soc. 137, p. 2550 (1990).
13. N. Hirashita, S. Tokitoh, and H. Uchida, Jpn. J. Appl. Phys., Part 1 32, 1787 (1993).
14. N. Hirashita, M. Kobayakawa, A. Arimatsu, F. Yokoyama, and T. Ajioka, J. Electrochem. Soc. 139, 794 (1992).
15. N. Hirashita, M. Kinoshita, I. Aikawa, and T. Ajioka, Appl. Phys. Lett. 56, 451 (1990).
16. M. Kuhn, Solid-State Electron. 13, 873 (1970).
17. S. D. Brotherton, J. R. Ayres, D. J. McCulloch, and N. D. Young, in Physical and Technical Problems of SOI Structures and Devices, edited by, J. P. Colinge, V. S. Lysenko, and, A. N. Nazarov, (Kluwer Academic, Dordrecht, 1995), p. 183.
18. S. D. Brotherton, D. J. McCulloch, J. P. Gowers, J. R. Ayres, and M. J. Trainor, J. Appl. Phys. 82, 4086 (1997).
19. L. Mariucci, F. Giacometti, A. Pecora, F. Massussi, G. Fortunato, M. Valdinoci, and L. Colalongo, Electron. Lett. 34, 924 (1998).
20. M. Valdinoci, L. Colalongo, G. Baccarani, G. Fortunato, A. Pecora, and I. Policicchio, IEEE Trans. Electron Devices 44, 2234 (1997).