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Volumn 18, Issue 4, 2006, Pages 457-460

New route to three-dimensional photonic bandgap materials: Silicon double inversion of polymer templates

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; COST EFFECTIVENESS; HOLOGRAPHY; LASERS; LITHOGRAPHY; SILICON; SYNTHESIS (CHEMICAL);

EID: 33644536101     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200501674     Document Type: Article
Times cited : (247)

References (24)
  • 23
    • 33644560407 scopus 로고    scopus 로고
    • Aghia Pelaghia, Crete, Greece, June
    • We would like to note that to date the achievable minimum feature size is mainly dominated by imperfections due to shrinkage during the SU-8 development process and due to the resolution of the photoresist. To date, samples fabricated via DLW could successfully reach a rod spacing of 650 nm [13]. Preliminary results on double inversion of samples fabricated via holographic lithography with minimum feature sizes of 100 nm were also reported by us: D. C. Meisel, K. Busch, M. Wegener, presented at PECS-VI, Int. Symp. on Photonic and Electromagnetic Crystal Structures, Aghia Pelaghia, Crete, Greece, June 2005.
    • (2005) PECS-VI, Int. Symp. on Photonic and Electromagnetic Crystal Structures
    • Meisel, D.C.1    Busch, K.2    Wegener, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.