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Volumn 389-393, Issue 1, 2002, Pages 359-362

Void-free epitaxial growth of cubic SiC crystallites during CO heat treatment of oxidized silicon

(7) Krafcsik, Olga H a Vida, György b Josepovits, Katalin V b Deák, Peter b Radnóczi, György Z a Pécz, Béla a Bársony, István a

a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS (Hungary)

Author keywords

CO annealing; Epitaxial growth; Void free

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTALLITES; EPITAXIAL GROWTH; GRAIN BOUNDARIES; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; FLOCCULATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICA; SILICON OXIDES;

CAPACITANCE-VOLTAGE; CO-ANNEALING; SURFACE LAYERS; VOID-FREE; CAPACITANCE VOLTAGE; CO ANNEALING; CO HEAT TREATMENTS; GAS AMBIENTS; OXIDIZED SILICON; SI(001) SURFACES; TEM (TRANSMISSION ELECTRON MICROSCOPY);

SILICON; SILICON CARBIDE;

EID: 3342948979 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.359 Document Type: Article

Times cited : (6)

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