Scanning tunneling and cathodoluminescence spectroscopy of indium nitride

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 106-110

  Phillips, M R ^a   Zareie, M H ^a   Gelhausen, O ^a   Drago, M ^b   Schmidtling, T ^b   Richter, W ^b  

^a UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Cathodoluminescence spectroscopy; A1. Scanning tunneling microscopy; A1. Scanning tunneling spectroscopy; B1. Indium nitride

Indexed keywords

BANDPASS FILTERS; CATHODOLUMINESCENCE; ELECTRON MOBILITY; ELECTRON TUNNELING; ENERGY GAP; LAYERED MANUFACTURING; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS;

EPILAYERS; INN; SATURATION VELOCITY; SCANNING TUNNELING SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3342901943     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.087     Document Type: Conference Paper

References (7)

1. Bhuiyan A.G., Hashimoto A., Yamamoto A. J. Appl. Phys. 94:2003;2779.
2. Look D.C., Lu H., Schaff W.J., Jasinski J., Liliental-Weber Z. Appl. Phys. Lett. 80:2002;258.
3. Pankove J. Optical Process in Semiconductors. 1975;Dover, New York.
4. Davydov V.Yu., et al. Phys. Stat. Sol. (b). 234:2002;787.
5. Feenstra R.M. Surf. Sci. 299/300:1994;965.
6. Feenstra R.M. Phys. Rev. B. 50:1994;4561.
7. Stroscio J.A., Feenstra R.M. J. Vac. Sci. Technol. B. 6:1988;1472.