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Physical Review Letters

Volumn 96, Issue 4, 2006, Pages

Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies

(5) Lastras Martinez L F a Flores Camacho, J M a Lastras Martinez A a Balderas Navarro, R E a,b Cardona, M c

a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA (Mexico)

b UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ (Mexico)

c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTROOPTICAL EFFECTS; PIEZOELECTRICITY; STRAIN;

ELECTRO-OPTIC COEFFICIENT; SURFACE RECONSTRUCTION; SURFACE STRAIN;

GALLIUM COMPOUNDS;

EID: 33144461553 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.96.047402 Document Type: Article

Times cited : (19)

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