Modeling and design of a novel high-sensitivity electric field silicon-on-insulator sensor based on a whispering-gallery-mode resonator

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 1, 2006, Pages 124-133

  Passaro, Vittorio M N ^a,b,c,d   De Leonardis, Francesco ^b,e  

^a IEEE   (Italy)

^b POLITECNICO DI BARI   (Italy)

^c OPTICAL SOCIETY OF AMERICA   (United States)

^d National University Consortium of Matter Structure   (Italy)

^e Italian Society of Optics and Photonics   (Italy)

Author keywords

Electric field measurement; Modeling; MOS capacitors; Optical losses; Optical waveguide components; Resonators; Silicon on insulator technology

Indexed keywords

ELECTRIC FIELD MEASUREMENT; MATHEMATICAL MODELS; MOS CAPACITORS; POLYSILICON; SCATTERING; SILICON SENSORS;

OPTICAL LOSSES; OPTICAL WAVEGUIDE COMPONENTS; SILICON-ON-INSULATOR TECHNOLOGY;

OPTICAL RESONATORS;

EID: 32944457378     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2005.862950     Document Type: Article

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