Modeling of silicon atoms diffusion in GaAs in view of nonuniform distribution of point defects

Materials Science in Semiconductor Processing

Volumn 7, Issue 1-2, 2004, Pages 27-33

  Saad, A M ^a   Velichko, O I ^b  

^a AL BALQA APPLIED UNIVERSITY   (Jordan)

^b BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

Gallium arsenide; Silicon; Thermal diffusion; Vacancy

Indexed keywords

ABSORPTION; ADDITIVES; HETEROJUNCTIONS; IMPURITIES; POINT DEFECTS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL DIFFUSION IN SOLIDS;

AMPHOTERIC BEHAVIOURS; GALLIUM ARSENIDE; VACANCY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3242888838     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.01.003     Document Type: Article

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