Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs

Materials Science in Semiconductor Processing

Volumn 7, Issue 1-2, 2004, Pages 19-25

  Li, Z C ^a,b   Zhang, H ^a   Xu, Y B ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Amorphous GaAs; Crystallization; Electron beam irradiation; Electron microscopy

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; CRYSTALLIZATION; CURRENT DENSITY; ELECTRON BEAMS; ELECTRON IRRADIATION; ELECTRON MICROSCOPY; NUCLEATION;

AMORPHOUS GAAS; ELECTRON BEAM IRRADIATION; IONIZATION PROCESSES; SOLID PHASE EPITAXIAL CRYSTALLIZATION (SPEC);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3242884119     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.10.002     Document Type: Article

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