Near-bandgap photoluminescence decay time in GaN epitaxial layers grown on sapphire

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 559-564

  Hangleiter, A ^a   Im, J S ^a   Forner, T ^a   Haerle, V ^a   Scholz, F ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE; THERMAL EFFECTS; X RAY DIFFRACTION;

CARRIER DYNAMICS; DECAY TIME; DONOR LEVEL; GALLIUM NITRIDE; INTERBAND MOMENTUM MATRIX ELEMENT; RADIATIVE RECOMBINATION COEFFICIENT; THERMAL DISSOCIATION;

NITRIDES;

EID: 0029726095     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)