Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Tiginyanu, Ivan M ^a   Kravetsky, Igor V ^a   Pavlidis, Dimitris ^b   Eisenbach, Andreas ^b   Hildebrandt, Ralf ^c   Marowsky, Gerd ^c   Hartnagel, Hans L ^d  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b UNIVERSITY OF MICHIGAN   (United States)

^c LASER LABORATORIUM GÖTTINGEN E V   (Germany)

^d DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAMS; LIGHT INTERFERENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; QUARTZ; SAPPHIRE; SECOND HARMONIC GENERATION; SEMICONDUCTOR GROWTH;

OPTICAL CHARACTERIZATION; THIRD-HARMONIC GENERATION (THG); WURZITES;

GALLIUM NITRIDE;

EID: 3242795041     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300005056     Document Type: Conference Paper

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