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Volumn 455-456, Issue , 2004, Pages 482-485
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Spectroscopic ellipsometry analysis for investigation of the modification of thin film p-a-Si1-xCx:H after ultraviolet treatment in an Argon ambient
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Author keywords
Hydrogen emission; Photo CVD; Spectroscopic ellipsometry; UTA
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Indexed keywords
AMORPHOUS SILICON;
CHEMICAL VAPOR DEPOSITION;
ELLIPSOMETRY;
GAS EMISSIONS;
HYDROGENATION;
PERMITTIVITY;
SILICON ALLOYS;
SOLAR CELLS;
SPECTROSCOPIC ANALYSIS;
SURFACE TREATMENT;
HYDROGEN EMISSIONS;
PHOTOCHEMICAL VAPOR DEPOSITION;
SPECTROSCOPIC ELLIPSOMETRY;
ULTRAVIOLET TREATMENT IN AR AMBIENT (UTV);
THIN FILMS;
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EID: 17144443018
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2004.01.018 Document Type: Conference Paper |
Times cited : (6)
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References (13)
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