Investigation of radiative and nonradiative trap centers in ZnSe:Al layers grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1475-1478

  Oh, D C ^a   Makino, H ^a   Hanada, T ^a   Cho, M W ^a   Yao, T ^a   Song, J S ^b   Chang, J H ^c   Lu, F ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b NeosemiTech Corporate   (South Korea)

^c Korea Maritime University   (South Korea)

^d FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

CARRIER COMPENSATION; CONDUCTION BAND MINIMUM (CBM); ELECTRON CONCENTRATION; PHOTOCAPACITANCE (PHCAP);

SEMICONDUCTING ZINC COMPOUNDS;

EID: 3242712300     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1755713     Document Type: Conference Paper

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