Effective potential approach to modeling of 25 nm MOSFET devices

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 311-317

  Ringhofer, C ^a   Ahmed, S S ^b   Vasileska, D ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

Author keywords

Effective potentials; Quantum thermodynamics

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; KINETIC ENERGY; LEAKAGE CURRENTS; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTOR DEVICES; THERMODYNAMICS; TRANSCONDUCTANCE;

EFFECTIVE POTENTIALS; ELECTRON VELOCITY; QUANTUM THERMODYNAMICS; SIZE-QUANTIZATION EFFECTS;

MOSFET DEVICES;

EID: 3242706762     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.021     Document Type: Conference Paper

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