Quantum mechanical tunneling phenomena in metal-semiconductor junctions

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 335-339

  Tarik, K ^a   Vasileska, D ^a   Thornton, T J ^a  

^a Arizona State University   (United States)

Author keywords

2D Monte Carlo simulation; Airy functions; SJT; Subthreshold regime; Transfer matrix method

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; LEAKAGE CURRENTS; MESFET DEVICES; MONTE CARLO METHODS; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; TRANSFER FUNCTIONS; TRANSISTORS;

2D MONTE CARLO SIMULATION; AIRY FUNCTIONS; SCHOTTKY JUNCTION TRANSISTORS (SJT); TRANSFER MATRIX METHOD;

SEMICONDUCTOR JUNCTIONS;

EID: 3242698712     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.022     Document Type: Conference Paper

References (6)

1. Thornton T.J. Physics and applications of the Schottky junction transistor. IEEE Trans. Electron Devices. 48:2001;2421.
2. Winstead B., Ravaioli U. Simulation of Schottky barrier MOSFETs with a coupled quantum injection/Monte Carlo technique. IEEE Trans. Electron Devices. 47:2000;1241.
3. Herring C., Vogt E. Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering. Phys. Rev. 101:1956;944.
4. Jacoboni C., Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Modern Phys. 55:1983;645.
5. Hockney R.W., Eastwood J.W. Computer Simulation Using Particles. 1981;McGraw-Hill, Maidenhead, UK.
6. Lui W.W., Fukuma M. Exact solution of the Schrödinger equation across an arbitrary one-dimensional piecewise-linear potential barrier. J. Appl. Phys. 60:1986;1555.