Smoothing of textured GaAs surfaces during molecular beam epitaxy growth

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1488-1492

  Adamcyk, M ^a   Ballestad, A ^a   Pinnington, T ^a   Tiedje, T ^a   Davies, M ^b   Feng, Yan ^b  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC FORCE MICROSCOPY; EVAPORATION; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; NUMERICAL ANALYSIS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; TEXTURES;

ANISOTROPIC KARDAR-PARISI-ZHANG (AKPZ) EQUATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034187089     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591410     Document Type: Article

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