CdSe quantum dots grown on ZnSe and Zn 0.97Be 0.03Se by molecular-beam epitaxy: Optical studies

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1518-1522

  Zhou, Xuecong ^a,c   Muñoz, Martin ^a   Guo, Shiping ^a   Tamargo, Maria C ^a   Gu, Yi ^b   Kuskovsky, Igor L ^b   Neumark, Gertrude F ^b  

^a CITY COLLEGE OF NEW YORK   (United States)

^b Department of Earth and Environmental Sciences   (United States)

^c CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACTLESS ELECTROREFLECTANCE (CER); FRANZ-KELDYSH OSCILLATIONS; LORENTZIAN BROADENED ELECTROOPTCAL FUNCTIONS; PHOTOLUMINESCENCE EXCITATION (PLE);

ATOMIC FORCE MICROSCOPY; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SELF ASSEMBLY; SEMICONDUCTING CADMIUM COMPOUNDS; ZINC COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3242692471     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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