Analytical model for electron field emission from capped carbon nanotubes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1234-1239

  Filip, V ^a   Nicolaescu, D ^b   Tanemura, M ^c   Okuyama, F ^c  

^a UNIVERSITY OF BUCHAREST   (Romania)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRONS; MATHEMATICAL MODELS; PROBABILITY DISTRIBUTIONS; QUANTUM THEORY;

ELECTRON FIELD EMISSION; ELECTRON SURFACE DENSITY; HEMISPHERICAL CAP; QUANTUM STATES;

ELECTRON EMISSION;

EID: 3242680752     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1752902     Document Type: Conference Paper

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