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Journal of Non-Crystalline Solids

Volumn 216, Issue , 1997, Pages 26-29

Role of impurities in the 5.16 eV optical absorption band of Ge-doped silica

(5) Martini, M a Meinardi, F a Paleari, A a Portinari, L a Spinolo, G a

a UNIVERSITY OF MILAN (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (OPTICAL); ELECTRON ENERGY LEVELS; IMPURITIES; LIGHT ABSORPTION; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING;

OPTICAL ABSORPTION BAND;

SILICA;

EID: 0031211502 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(97)00237-8 Document Type: Article

Times cited : (7)

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