Molecular-beam epitaxy growth of quantum cascade lasers on (111)B substrates for second harmonic generation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1558-1561

  Marcadet, X ^a   Ortiz, V ^a   Bengloan, J Y ^a   Dhillon, S ^a   Calligaro, M ^a   Sirtori, C ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALIBRATION; CASCADE CONNECTIONS; COHERENT LIGHT; CRYSTAL ORIENTATION; DESORPTION; FREQUENCY DOUBLERS; LIGHT EMISSION; MAGNETIC SUSCEPTIBILITY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; POLARIZATION; SEMICONDUCTOR LASERS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

MID-INFRARED WAVELENGTH; NONCENTROSYMMETRY; PYRAMIDAL DEFECTS; QUANTUM CASCADE LASERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3242670737     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1752916     Document Type: Conference Paper

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