InAs/AlSb quantum cascade lasers operating at 6.7 μm

Electronics Letters

Volumn 39, Issue 17, 2003, Pages 1252-1254

  Teissier, R ^a   Barate, D ^a   Vicet, A ^a   Yarekha, D A ^a   Alibert, C ^a   Baranov, A N ^a   Marcadet, X ^b   Garcia, M ^b   Sirtori, C ^b,c  

^a UNIV MONTPELLIER   (France)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; LASER MODES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; OPTICAL WAVEGUIDES; PLASMA CONFINEMENT; PULSED LASER APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROMETERS;

ALUMINUM ANTIMONIDE; INDIUM ARSENIDE; NEGATIVE DIFFERENTIAL RESISTANCE; QUANTUM CASCADE LASERS;

QUANTUM WELL LASERS;

EID: 0043240704     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030780     Document Type: Article

References (10)

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