Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra

Applied Physics Letters

Volumn 88, Issue 5, 2006, Pages 1-3

  Sanchez, A M ^a   Beanland, R ^b   Papworth, A J ^c   Goodhew, P J ^c   Gass, M H ^d  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b Bookham Technology plc   (United Kingdom)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; ENERGY DISSIPATION; MATHEMATICAL MODELS; PLASMAS;

ELECTRON ENERGY LOSS; NANOMETER-SCALE STRAIN MEASUREMENTS; PLASMON PEAK; SPATIAL RESOLUTION;

SEMICONDUCTOR MATERIALS;

EID: 31944449133     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2169904     Document Type: Article

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