Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 B, 2006, Pages 530-533

  Ogawa, Satoshi ^a   Nauo, Tatsuo ^a   Ktmura, Yasuo ^a,b   Ishii, Hisao ^a,b   Niwano, Michio ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Field effect transistors; Organic semiconductors; Pentacene; Photoinduced doping; Poly(3 hexylthiophene)

Indexed keywords

ABSORPTION; CHARGE TRANSFER; OXYGEN; SEMICONDUCTOR DOPING;

CHARGE-TRANSFER REACTIONS; DISPLACEMENT CURRENT MEASUREMENT (DCM); PENTACENE;

FIELD EFFECT TRANSISTORS;

EID: 31944440408     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.530     Document Type: Article

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