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Volumn 24, Issue 1-2, 2002, Pages 223-228
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Atomistic model of electric stress induced defect generation in silicon oxide
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Author keywords
Atomistic model; Breakdown; Gate oxide; Reliability; Silicon dioxide; Wear out
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Indexed keywords
CRYSTAL DEFECTS;
DIELECTRIC MATERIALS;
ELECTRIC CONDUCTANCE;
ELECTRIC FIELDS;
ELECTRONS;
PARAMAGNETISM;
POLARIZATION;
PROBABILITY DENSITY FUNCTION;
QUANTUM THEORY;
DIELECTRIC BREAKDOWN;
ELECTRIC STRESS;
GATE OXIDES;
SILICA;
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EID: 0036577364
PISSN: 09270256
EISSN: None
Source Type: Journal
DOI: 10.1016/S0927-0256(02)00202-1 Document Type: Conference Paper |
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Times cited : (8)
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References (18)
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